The Impact of Structural Parameters on the Performance of Nanoscale DG-SOI MOSFETs in Sub threshold Region

Subject Areas : Communication

فاطمه کهنی ¹ , حامد نعمتیان ² , مرتضی فتحی پور ³

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Received: 2010-08-11 Accepted : 2010-12-11 Published : 2010-03-01

Keywords: DG-SOI MOSFETs, Fringe Capacitance, Electrical Characteristics, Nanoscale Devices, Sub Threshold Region,

Abstract :

This paper is intended to investigate the impact of structural parameters (in particular: body thickness (TBody ), Source/Drain Length (LS /LD ) and gate oxide thickness (TOX )) on the electrical characteristics of nanoscale Double Gate SOI MOSFET (DG SOI MOSFET) in subthreshold regime. It will be shown that a reduction in Ls /Ld doesn't have a profound effect on both on-current and Drain Induced Barrier Lowering Effect (DIBL); however it increases the effective Gate Capacitance (CGeff ) significantly. A decrease in Tbody results in an increase in CGeff and a decrease in potential barrier height while ION is reduced. This investigation also proves that as TOX is increased, CGeff is decreased. A decline in TOX reduces ION while it drastically increases ION /IOFF ratio.