Simulation of changes in CTI of CCD58 due to space ionizing radiation

Subject Areas : Majlesi Journal of Telecommunication Devices

Rahim Jalinouszadeh ^{1 *}

1 - Department of Nuclear Engineering, Sahid Beheshti University, Tehran, Iran

Received: 2014-12-06 Accepted : 2014-12-12 Published : 2014-12-01

Keywords: en,

Abstract :

Charge Coupled Devices (CCDs) are one of the best sensors for use in space explorations which is described as a closely spaced array of metal-oxide semiconductor (MOS) that allows collection,storage and transfer of charge. It is utilized for a large range of wave length including UV to visible light. The experiments done on these space sensors, show that using them in environments with ionizing radiations can regard their functionality. Generally we can summarize the mechanism of these radiation damages in two category: Total Ionizing Dose effects(TID) and Displacement Damage effects(DD). DD effects result in Charge Transfer Efficiency(CTE) reduction, dark current noise increase and etc. In this article we have proceed the simulation of  CTE degradation and related parameters for a model  of CCD that is CCD58. These studies utilise the package ISE-TCad software.Then we have compared and  have validated our simulation results with the experimental data from laboratory measurements . The experimental measurements have been carried out by researchers at the University of Liverpool.     

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