Design of High Isolation Ka-band Radio Frequency MEMS Capacitive Shunt Switch

Subject Areas : Majlesi Journal of Telecommunication Devices

Reza  Pourandoost ¹ (Sadjad Institute for Higher Education)
Saber  Izadpanah Tous ² (Sadjad Institute for Higher Education)
Hooman  Nabovati ³ (Sadjad Institute for Higher Education)
Khalil  Mafinejad ⁴ (Sadjad Institute for Higher Education)

Received: 2013-07-25 Accepted : 2013-07-25 Published : 2013-01-01

Keywords: en,

Abstract :

Radio frequency (RF) micro electro-mechanical systems (MEMS) switches are rapidly replacing the PIN diodes and field-effect transistors (FET). Linear behavior, low power consumption, low insertion loss, high isolation, improvement power handling and etc. are benefits of MEMS switches. This paper presents a high isolation RF MEMS capacitive switch with two shunt beams for Ka-band (27-40 GHz) applications such as in communications satellites. Simulation results using Ansoft’s high frequency simulation software (HFSS) at Ka-band shows in the down-state of switch, the isolation (S21) is > 47 dB and return loss (S11) is < 0.3 dB. In the up-state, the insertion loss (S21) is less than 0.15 dB and the return loss (S11) is more than 18 dB. The pull down voltage of designed switch is 5.13 V and down-state to up-state capacitance ratio (Cd/Cu=12.11pF/0.137pF) is 88.39. Also a novel index material (IM2) is proposed to determine optimum material using Ashby approach. In this paper the Aluminum (Al) is chosen for the membrane for having low pull down voltage and silicon nitride (Si3N4) is chosen for dielectric for having faster switching speed and larger down-state capacitance.

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