Design and Simulation of an X-BAND Balanced Power Amplifier for Linear Applications
Subject Areas : Majlesi Journal of Telecommunication Devices
1 - Department of Electrical and Computer Engineering, Isfahan University of Technology, Isfahan, Iran
2 - Department of Electrical and Computer Engineering, Lorestan University, Khorramabad, Iran
Keywords: en,
Abstract :
In this paper, a GaAs pHEMT class A balanced power amplifier with a 3-dB bandwidth of 4.5 GHz at the center frequency of 9 GHz is presented. Our amplifier yields to an input/output-matching better than -15 dB over this frequency band. Also, the realization of impedance matching network using microstrip line and lumped component is carried out. At the end, simulation results for the broadband impedance matching network are presented and analyzed
[1] E.S., Mengistu, “Large-Signal Modeling of GaN Device for Linear Power Amplifier Design”, Doctoral Thesis, University of Kassel, Kassel, Germany, 2008.
[2] M., Yanagihara, Y., Uemoto, T., Ueda, T., Tanaka, and D., Ueda, “Recent Advances in GaN Transistors for Future Emerging Applications,” Phys. Status. Solidi, Vol. 206, No. 6, pp.1221-1227, 2009.
[3] A. Z., Markos, “Efficiency Enhancement of Linear GaN RF Power Amplifiers Using the Doherty Technique”, Doctoral Thesis, University of Kassel, Kassel, Germany, 2008.
[4] A., Jarndal, “Large-Signal Modeling of GaN Device for High Power Amplifier Design”, Doctoral Thesis, University of Kassel, Kassel, Germany, 2006.
[5] D.M., Pozar, “Microwave Engineering ,”Wiley., Fourth edition , pp. 570-573, 2011.
[6] G., Gonzalez, “Microwave transistor amplifiers,” Second edition, Prentice Hall Inc., New Jersey, pp. 323-340, 1997.
[7] R., Kopru, H., Kuntman and B.S., Yarman, “A Novel Method to Design Wideband Power Amplifier for Wireless Communication,”, IEEE International Symposium on Circuits and Systems (ISCAS)., pp. 1942 - 1945, Beijing, May 2013.
[8] R., Kopru, H., Kuntman, B.S., Yarman, “2W wideband microwave PA design for 824-2170 MHz band using Normalized Gain Function method,”8th International Conference on Electrical and Electronics Engineering (ELECO), pp.344-348, Bursa, Nov 2013.
[9] A., Zokaei, M.A., Boroujeni, F., Razaghian and J., Alvankarian, “A 3-5 GHz Ultra Wideband Common-Gate Low Noise Amplifier,”IEEE International Conference on Circuits and Systems (ICCAS), pp. 98 - 102, Kuala Lumpur, Oct 2012.
[10] G.D., Vendelin, A.M., Pavio and U.L., Rohde, “Microwave Circuit Design Using Linear and nonlinear Techniques,” Wiley , pp. 247248, 2005.
[11] R.M., Fano, “Theoretical Limitations on the Broadband Matching of Arbitrary impedances, ”Journal of the Franklin Institute., vol.249(1,2), pp. 57-83 and 139-154, Jan 1950.
[12] G., Gonzalez, “Microwave transistor amplifiers,” Second edition, Prentice Hall Inc., New Jersey, pp. 327-331, 1997.
[13] F., Golcuk, O.D., Gurbuz and G.M., Rebeiz, “A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBm,” IEEE Trans. Microw. Theory Tech., Vol.61, No.12, pp. 4483 - 4491, 2013.
[14] H.L., Lee, D.H., Park, M.Q. Lee and J.W., Yu, “Reconfigurable 2 ,×, 2 Multi-Port Amplifier Using Switching Mode Hybrid Matrices,” IEEE Microwave and Wireless Components Letters., Vol. 24, No. 2, pp. 129 - 131, 2014.
[15] U., Schmid, H., Sledzik, P., Schuh, J., Schroth, M., Oppermann, P., M. Bruckner, F.V., Raay, R., Qauy and M.S., Eggebert, “Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications,” IEEE Trans. Microw. Theory Tech., Vol. 61, No. 8, pp. 3043 - 3051, 2013.
[16] W., A. Arriola, J. Y., Lee, and I. S., Kim, “Wideband 3 dB branch line coupler based on λ/4 open circuited coupled lines,” IEEE Microw. Wireless Compon. Lett., Vol. 21, No.9, pp. 486-488, Sept 2011.