Displacement Fields Influence Analysis Caused by Dislocation Networks at a Three Layer System Interfaces on the Surface Topology

Subject Areas : Engineering

A Boussaha ¹ , R Makhloufi ² , S Madani ³

1 - Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
2 - Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
3 - Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria

Received: 2019-06-20 Accepted : 2019-08-18 Published : 2019-09-30

Keywords: Dislocation, Anisotropic elasticity, Elastic field, network, Nanometric, Interface,

Abstract :

This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calculated in the case of anisotropic elasticity. The influence of elastic fields generated by induced square and parallel dislocation networks at CdTe / GaAs / (001) GaAs trilayer interfaces was investigated. By deposition, the nanostructures organization with respect to the topology was controled.

References:

[1]Wang X., Pan E., Albercht J.D., 2007, Anisotropic elasticity of multilayered crystals deformed by a biperiodic network of misfit dislocations, Physical Review B76: 134112.
[2] Wang H.Y., Yin Y.H., Yu S.R., 2011, Stress fields caused by a dislocation in an anisotropic 3-layer system, Science China Physics, Mechanics & Astronomy 54(3): 542-551.
[3] Makhloufi R., Brioua M., Benbouta R., 2016, The effect of the elastic fields caused by a networks of dislocations placed at interfaces of a three-layer material Cu/Cu/(001) Fe in the case of anisotropic elasticity, Arabian Journal for Science and Engineering 41(5): 1955-1960.
[4] Madani S., Outtas T., Adami L., 2008, Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundaries, Thin Solid Films 517(1): 262-264.
[5] Madani S., Outtas T., Adami L., 2007, Numerical simulation of anisotropic elastic fields of a GaAs/GaAs twist boundary, Physica Status Solidi 204(9): 3126-3131.
[6] Wang H.Y., Wu M.S., Fan H., 2007, Image decomposition method for the analysis of a mixed dislocation in a general multilayer, International Journal of Solids and Structures 44(5): 1563-1581.
[7] Koguchi H., Tanaka Y., 2017, Interaction of dislocations at interfaces in multilayered materials, Solid State Phenomena 258: 102-105.
[8] Bonnet R., Loubradou M., Catana A. , Stadelman P.,1991, Electron microscopy of transformation dislocations at interphase boundaries, Metallurgical and Materials Transactions A 22: 1145-1158.
[9] Bonnet R., Verger-Gaugry J.L., 1992, Couche épitaxique mince sur un substrat semi-infini: rôle du désaccord paramétrique et de l‘épaisseur sur les distortions élastiques, Philosophical Magazine: A 66(5): 849-871.
[10] Bonnet R., 1981, Periodic displacement and stress fields near a phase boundary in the isotropic elasticity theory, Philosophical Magazine: A 43(5): 1165-1187.
[11] Feuillet G., 1990, Evaluation of Advanced Semiconductor Materials by Electron microscopy, New York, Pleenum.
[12] Coelho J., 2004, Paris XI University, Ph.D. thesis, UFR Scientifique d'Orsay.
[13] Bonnet R., 2000, A two-layer epitaxial composite strained by an Array of misfit dislocations accommodating the lattice mismatch, Physica Status Solidi 177: 219-229.
[14] Bonnet R., Loubradou M., 1994, Atomic positions around misfit dislocations on a planar heterointerface, Physical Review B 49(20): 14397.