Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP

Subject Areas : Journal of Optoelectronical Nanostructures

Yagub Sefidgar ¹ (Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.)
Hassan Rasooli Saghai ² (Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran.)
Hamed Ghatei Khiabani Azar ³ (Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran)

Received: 2018-08-19 Accepted : 2019-06-11 Published : 2019-05-01

Keywords: Two-Bond Solar Cell, Tunnel Layer, Lattice Matching, Recombination,

Abstract :

Multi-junction solar cells play a crucial role in the Concentrated
Photovoltaic (CPV) Systems. Recent developments in CPV concerning high power
production and cost effective-ness along with better efficiency are due to the
advancements in multi-junction cells. This paper presents a simulation model of the
generalized Multi-junction solar cell and introduces a two-bond solar cell based on
InGaP/GaAs with an AlGaAs/GaAs tunnel layer.For enhancing the efficiency of the
proposed solar cell, the model adopts absorption enhancement techniques as well as
reducing loss of recombination by manipulating number of junctions and varying the
material properties of the multi-junctions and the tunneling layer. The proposed Multijunction
solar cell model employing tunnel junctions can improve efficiency up to by
35.6%. The primary results of the simulation for the proposed structure indicate that it is
possible to reduce the loss of recombination by developing appropriate lattice match
among the layers; it is also likely to have suitable absorption level of the phonons.
Simulation results presented in this paper are in agreement with experimental results.

References:

[1] A. J. Nozik, M. C. Beard, J. M. Luther, M. Law, R. J. Ellingson, and J. C.
Johnson , Semiconductor Quantum Dots and Quantum Dot Arrays and
Applications of Multiple Exciton Generation to Third-Generation
Photovoltaic Solar Cells, Chemical Reviews, 110 (11) , 6873-6890, 2010.
[2] M. Green, Photovoltaic principles, Physical E: Low-dimensional Systems
and Nanostructures, vol. 14, no. 1, pp. 11–17, 2002.
[3] M. Yamaguchi, T. Takamoto, K. Araki, and N. EkinsDaukes, Multi-junction
iii–v solar cells: current status and future potential, Solar Energy, vol. 79,
no. 1, pp. 78–85, 2005.
[4] M. Yamaguchi, Super-high-efficiency MJSCs, Progress in photovoltaics:
Research and applications, vol. 13, p. 125, 2005.
[5] F. Dimroth and S. Kurtz, High-efficiency multijunction solar cells, MRS
bulletin, vol. 32, no. 03, pp. 230–235, 2007.
[6] P. K. Maurya, and P. Chakrabarti, Modeling and simulation of
heterojunction photovoltaic detector based on InAs0.15Sb0.85 for free
space optical communication, Journal of Materials Science: Materials in
Electronics, 20, 359-362, 2009.
[7] A. Mart´ and A. Luque, Next generation photovoltaics: high efficiency
through full spectrum utilization, Taylor & Francis, 2004.
[8] M. A. Green, K.Emery, D.L.King, S.Igori and W.Warta, Prog, Photovolt:
Res. Appl., 13(2005), 387-392.
[9] Alireza Keshavarz, Zahra Abbasi, Spatial soliton pairs in an unbiased
photovoltaic-photorefractive crystal circuit, Journal of Optoelectronical
Nanostructures, Spring 2016 / Vol. 1, No.1
[10] Sayed Mohammad Sadegh Hashemi Nassab, Mohsen Imanieh, Abbas
Kamaly, The Effect of Doping and the Thickness of the Layers on CIGS
Solar Cell Efficiency, The Quarterly Journal of Optoelectronical
Nanostructures, Spring 2016 / Vol. 1, No.1
[11] R. Sherif, et al., Concentrator triple- junction solar cells and receivers in
point focus and dense array modules, Proceedings 21nd EU PVSEC-2006,
2006.
98 * Journal of Optoelectronical Nanostructures Spring 2019 / Vol. 4, No. 2
[12] R. King, N. Karam, J. Ermer, N. Haddad, P. Colter, T. Isshiki, H. Yoon, H.
Cotal, D. Joslin, D. Krutet al., Next-generation, high-efficiency iii-v
multijunction solar cells, in Photovoltaic Specialists Conference,
Conference Record of the Twenty-Eighth IEEE. IEEE, pp. 998–1001,
2000.
[13] M. Gonza´lez, N. Chan, N. Ekins-Daukes, J. Adams, P. Stavrinou, I.
Vurgaftman, J. Meyer, J. Abell, R. Walters, C. Cress et al., Modeling and
analysis of multijunction solar cells, in Proceedings of SPIE, vol. 7933, p.
79330R,2011.
[14] W. Guter and A. Bett, I-v characterization of devices consisting of solar
cells and tunnel diodes, in Conference Record of the 2006 IEEE 4th World
Conference on Photovoltaic Energy Conversion, vol. 1.IEEE, pp. 749–
752,2006.
[15] R. King, D. Law, K. Edmondson, C. Fetzer, G. Kinsey, H. Yoon, R. Sherif,
and N. Karam, 40% efficient metamorphic gainp/gainas/ge multijunction
solar cells, Applied Physics Letters, vol. 90, no. 18, pp. 183 516–183 516,
2007.
[16]. H. Chavez, R. Santiesteban, J.C. McClure and V.P. Singh, J. Mater,
Nanostructured Materials for Solar Energy Conversion, Sci.: Mater.
Electron, 6 ,21–24, 1995
[17] Ghatei Khiabani Azar H, Rasouli Saghai H, Manipulating frequencydependent
diffraction, the linewidth, center frequency and coupling
efficiency using periodic corrugations, Opt Quant Electron; 48: 464.1-12,
2016.
[18] A. Heller, Conversion of Sunlight into Electrical Power and Photoassisted
Electrolysis of water in photoelectrochemical cells, Accounts of chemical
research, Vol. 14 pp. 154-162, 1981.
[19] Hashemi Nassab, S., Imanieh, M., Kamaly, The Effect of Doping and the
Thickness of the Layers on CIGS Solar Cell Efficiency, Journal of
Optoelectronical Nanostructures, 1(1), 9-24, 2016.
Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP * 99
[20] Alireza Keshavarz, Zahra Abbasi, Spatial soliton pairs in an unbiased
photovoltaic-photorefractive crystal circuit, Journal of Optoelectronical
Nanostructures, Spring 2016 / Vol. 1, No.1
[21] Izadneshan, H., Gremenok, V., Solookinejad, G. , Fabrication Of
Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage
Process,Journal of Optoelectronical Nanostructures, 1(2), 47-56 ,2016.
[22] Mirkamali, A., khalimovich Muminov, K. , Numerical Simulation of
CdS/CIGS Tandem Multi-Junction Solar Cells with AMPS-1D, Journal of
Optoelectronical Nanostructures, 2(1), 31-40 ,2017..
[23] Mirkamali, A., Muminov, K. , The Effect of Change the Thickness on
CdS/CdTe Tandem Multi-Junction Solar Cells Efficiency, Journal of
[20] R.J. Nelson, J.S. Williams, H.J. Leamy, B. Miller, H.C. Casey, Jr., B.
Parkinson and A. Heller, Reduction of GaAs surface recombination
velocity by chemical treatment, Applied Physics Letters, Vol. 36 pp. 76,
1980.
[21] E. Yablonovitch, R. Bhat, J. P. Harbison, and R. A. Logan, Survey of
defect-mediated recombination lifetimes in GaAs epilayers grown by
different methods, Applied Physics Letters, Vol. 50, pp. 1197-9 Apr. 1987.
[22] L. W. Molenkamp and H. F. J. van't Blik, Very low interface
recombination velocity in (Al,Ga)As heterostructures grown by
organometallic vapor-phase epitaxy, Journal Applied Physics, Vol. 64, pp.
4253, 1988.
[23] J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keys and A. E. Kibbler.
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces,
Applied Physics Letters Vol. 55, pp. 1208, 1989.
[24] G. H. Olsen, M. Ettenberg, and R. V. D’Aiello, Vapor-grown InGaP/GaAs
solar cells, Applied Physics Letters, Vol. 33, pp. 606-608, 1978.
[25] L. Pavesi, M.Guzzi, Photoluminescence of AlxGa1-xAs alloys, Journal of
Appied. Physics, Vol. 75, pp. 4779-4842, May 1994.
[26] K. W. J. Barnham and G. Duggan, A new approach to high efficiency
multi-band-gap solar cell, J. Appl. Phys. 67(7), 1990.
[27] K. W. J. Barnham and D. Vvedensky, Low-Dimensional semiconductor
structures, Cambridge university press, 393, (2001).
[28] K. W. J. Barnham, I. Ballard, J. Connolly, et all, Quantum well solar cell,
Physica E, 14, 27-36, 2002.
[29] F. Dimroth, High- efficiency solar cells from III-V compound
semiconductors, phys.spl.(c)2.(3112),2016.
[30] H.jianmin, W. Yiyoung , X.Jingdong, Y.Dezhuang , and Z.Zhhongwei,
Degradation behaviors of lectrical properties of GaInP/GaAS/Ge solar
cells under <200 keV proton irradiation, Solar Energy Materials & Solar
cells 92, (2008).
[31] Dorna Mortezapour, Javad Karamdel, Mohamadali Moradian,
Improvement of Radiation Resistance in InGaP/GaAs/Ge Triple Junction
Solar Cell by using AlInGaP and Grading Doping Concentration3rd
conference on renewble energies,Esfahan,,2013.
[32] Malmström, J., On Generation and Recombination in Cu(In,Ga)Se2 Thin-
Film Solar Cells (PhD dissertation), Acta Universitatis Upsaliensis,
Uppsala, (2005).
[33] Brübach, J., Ultrathin InAs/GaAs quantum wells : electronic structure,
excitonic effects and carrier capture ,Eindhoven: Technische Universiteit
Eindhoven , 10.6100/IR539984, 2001.
[34] G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, A new
recombination model for device simulation including tunneling, IEEE
Transactions on Electron Devices 39, 331-8 (1992).
[35] Silvaco International, Silvaco User's Manual, ed. Silvaco, 2006.
[36] http://www.pveducation.org/
[37] W. Guter and A. Bett, I-v characterization of tunnel diodes and
multijunction solar cells, IEEE Transactions on Electron Devices, vol. 53,
no. 9, 2216–2222, 2006.
[38] B. Sagol, N. Szabo, H. Doscher, U. Seidel, C. Hohn, K. Schwarzburg, and
T. Hannappel, Lifetime and performance of ingaasp and ingaas absorbers
for low bandgap tandem solar cells, in 34th IEEE Photovoltaic Specialists
Conference (PVSC), IEEE, ,001 090–001 093, 2009.
[39] M. Hermle, G. Letay, S. Philipps, and A. Bett, Numerical simulation of
tunnel diodes for multi-junction solar cells, Progress in Photovoltaics:
Research and Applications, vol. 16, no. 5, 409– 418, 2008.