Quantum modeling of light absorption in graphene based photo-transistors
Subject Areas : Journal of Optoelectronical NanostructuresHamid Faezinia 1 , Mahdi zavvari 2
1 - Department of Electronic Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran
2 - Department of Electronic Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran
Keywords: Non-equilibrium Green&rsquo, s function, Graphene nano-ribbon, Photo-transistor, Self-energy,
Abstract :
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in GNR channel into account. The self-energy matrix is treated as a scattering matrix which leads to creation of carriers. The transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. The resulting self-energy matrix is added to retarded Green’s function and is used in transport equations for calculation of current flow in the photo-transistor. By considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.
[1]. H. Lu, "Plasmonic characteristics in nanoscale graphene resonator-coupled waveguides," Appl. Phys. B 118, 61-67 (2015).
[2]. F. Ostovari and M. K. Moravvej-Farshi, "Dual function armchair graphene nanoribbon-based spin-photodetector: optical spin-valve and light helicity detector," Appl. Phys. Lett 105, 072407-072401 (2014).
[3]. C. H. Liu, Y. C. Chang, T. B. Norris, and Z. Zhong, "Graphene photodetectors with ultra-broadband and high responsivity at room temperature," Nature Nanotech. 9, 273–278 (2014).
[4]. A. Y. Goharrizi, M. Pourfath, M. Fathipour, and H. Kosina, "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness," IEEE Trans. Electron. Dev. 59, 3527 - 3532 (2012).
[5]. R. F. M. Rostami, H. Rabiee Golgir, "Magnetization of bilayer graphene with interplay between monovacancy in each layer," J. Appl. Phys. 114, 084313-084311-084313-084315 (2013).
[6]. C. Berger, Z. Song, X. Li, W. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. d. Heer, "Electronic Confinement and Coherence in Patterned Epitaxial Graphene " Science 312 1191-1196 (2006).
[7]. P. Avouris, Z. Chen, and V. Perebeinos, "Carbon-based electronics," Nature Nanotech. 2, 605 - 615 (2007).
[8]. J. Shang, T. Yu, and G. G. Gurzadyan, "Femtosecond energy relaxation in suspended graphene: phonon-assisted spreading of quasiparticle distribution," Appl. Phys. B 107, 131-136 (2012).
[9]. K. Nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, "Edge state in graphene ribbons: Nanometer size effect and edge shape dependence," Phys. Rev. B 54, 17954 (1996).
[10]. H. Mohamadpour and A. Asgari, "Graphene nanoribbon tunneling field effect transistors," Physica E 46, 270–273 (2012).
[11]. J. Capmany, D. Domenech, and P. Muñoz, "Silicon graphene waveguide tunable broadband microwave photonics phase shifter," Opt. Express 22, 8094-8100 (2014).
[12]. P. B. Bennett, Z. Pedramrazi, A. Madani, Y.-C. Chen, D. G. d. Oteyza, C. Chen, F. R. Fischer, M. F. Crommie, and J. Bokor, "Bottom-up graphene nanoribbon field-effect transistors," Appl. Phys. lett. 103, 253114-253111-253114-253114 (2013).
[13]. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, "Graphene photonics and optoelectronics," Nature Photon. 4, 611 - 622 (2010).
[14]. R. F. H. Rabiee Golgir, M. Pazoki, H. Karamitaheri, R. Sarvari, "Investigation of quantum conductance in semiconductor single-wall carbon nanotubes: Effect of strain and impurity," J. Appl. Phys. 110, 064320-064321-064320-064326 (2011).
[15]. A. R. Wright, J. C. Cao, and C. Zhang, "Enhanced optical conductivity of bilayer graphene nanoribbons in the terahertz regime.," Phys. Rev. Lett. 103, 207401 (2009).
[16]. J. M. Dawlaty, S. Shivaraman, J. Strait, P. George, M. Chandrashekhar, F. Rana, M. G. Spencer, D. Veksler, and Y. Q. Chen, "Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible," Appl. Phys. Lett 93, 131905 (2008).
[17]. J. Li, L. Niu, Z. Zheng, and F. Yan, "Photosensitive Graphene Transistors," Adv. Mater. 26, 5239–5273 (2014).
[18]. X. Gan, R. J. Shiue, Y. Gao, I. Meric, T. F. Heinz, K. Shepard, J. Hone, S. Assefa, and D. Englund, "Chip-integrated ultrafast graphene photodetector with high responsivity," Nature Photon. 7, 883–887 (2013).
[19]. F. Withers, T. H. Bointon, M. F. Craciun, and S. Russo, "All-Graphene Photodetectors," ACS Nano 7, 5052–5057 (2013).
[20]. A. U. M. Furchi, A. Pospischil, G. Lilley, K. Unterrainer, H. Detz, P. Klang, A. M. Andrews, W. Schrenk, G. Strasser, T. Mueller, "Microcavity-Integrated Graphene Photodetector," Nano Lett. 12, 2773–2777 (2012).
[21]. Q. Gao and J. Guo, "Quantum mechanical simulation of graphene photodetectors," J. Appl. Phys. 112, 084316-084311-084316-084316 (2012).
[22]. E. Ahmadi and A. Asgari, "Modeling of the infrared photodetector based on multi layer armchair graphene nanoribbons," J. Appl. Phys. 113, 093106-093101-093106-093107 (2013).
[23]. S. Datta, Quantum Transport: Atom to Transistor (Cambridge, 2005).
[24]. M. Pourfath and S. Selberherr, "Current Transport in Carbon Nanotube Transistors," in 7th International Caribbean Conference on Devices, Circuits and Systems, 2008),
[25]. G. D. Mahan, "Electron–optical phonon interaction in carbon nanotubes," Phys. Rev. B 68, 125409-125401-125409-125405 (2003).
[26]. S. O. Koswatta, M. S. Lundstrom, and D. E. Nikonov, "Band-to-Band Tunneling in a Carbon Nanotube Metal-Oxide-Semiconductor Field-Effect Transistor Is Dominated by Phonon-Assisted Tunneling," Nano Lett. 7, 1160–1164 (2007).