Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Subject Areas : Journal of Optoelectronical Nanostructures

Mahdi Gholampour ¹ , Amir Abdollah-zadeh ² , Leila Shekari ³ , Reza Poursalehi ⁴ , mahdi soltanzadeh ⁵

1 - 1.Physics Group, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran 2.Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
2 - Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
3 - Barman International Technology Development Company
4 - Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran
5 - Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran

Received: 2017-11-13 Accepted : 2018-04-30 Published : 2018-01-01

Keywords: Optical Properties, Chemical Vapor Deposition, GaN, Green Method, Nanostructures,

Abstract :

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulsed
direct current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartz
substrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma were
used as precursors. The morphology and structure of the grown GaN NS were
characterized by field emission scanning electron microscope (FE-SEM), transmission
electron microscopy (TEM) and X-ray diffraction (XRD). The XRD pattern shows that
GaN NS were grown in the hexagonal wurtzite-type crystal structure. The optical
properties of the grown GaN NS were examined by photoluminescence (PL), UVvisible
and Raman spectroscopy. The PL spectroscopy measurements of the grown GaN
NS showed blue shifts as compared to the GaN bulk structure. The Raman spectra
displayed three Raman active optical phonons at 534 cm-1, 570 cm-1 and 730 cm-1 due to
A1 (TO), E2 (high) and A1 (LO), respectively.

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