Optimization and evaluation of structural performance in the design of an all-optical nano-switch based on two-dimensional and alternating photon crystal structures used in all-optical circuits

Subject Areas : journal of Artificial Intelligence in Electrical Engineering

adel  habibpour ¹ (Computer, Engineering, Islamic Azad University of Ahar, Ahar, Iran)

Received: 2021-10-18 Accepted : 2021-11-03 Published : 2020-03-01

Keywords: All-optical switch, Photon crystal, Photon band gap, Response speed, Optical intensifier,

Abstract :

in this paper, a new example of these structures has been designed and simulated using two-dimensional photon crystals. This proposed structure uses point nano-amplifiers to couple light to waveguides, and two input and output waveguides. In the design of this all-optical switch, the mechanism of interference effect in photon crystals has been used in order to make the structure simpler and smaller. This optical structure is based on silicon technology and is designed using dielectric rods in an air bed. In this structure, the constant value of the lattice is about 549 nm, the radius of the dielectric rods is about 100 nm and the radius of the nano-optical intensifiers is 30 nm. This structure was active at 1550 nm and by examining at 1559, its performance in switching mode was analyzed. The response rate of the structure was 0.75 ps. The rate of placement losses in the structure for different inputs according to the input power of 1 mW / 2m2 is about -13 dB and the rate of shutdown rate for this input is equal to 12.8 dB. In order to optimize the structure in terms of the effects of the parameters involved in it to examine various factors, including; The input power, wavelength and central frequency, the size of the radius of the nano-resonator rods, the size of the dielectric rods and the fixed network are discussed. In order to analyze the structure in terms of scattering and photon band gap range, PWE method has been used and to analyze and obtain the output spectrum of the structure, FDTD method has been used. Due to the size of 7.86 m2, flexibility and suitable simulation results, this proposed structure is very suitable for applications of optical integrated circuits.