Improvement of Quality Specifications of Light-Emitting Diodes based on ‎the Photonic Crystals

Subject Areas : Electrical Engineering

Ali Kian ^{1 *}

1 - Department of Electrical Engineering , Golestan University ,Iran

Received: 2020-02-15 Accepted : 2020-02-15 Published : 2019-12-01

Keywords: Photonic Crystal, LED, GaN, Finite-Difference Time Domain (FDTD)‎,

Abstract :

In this paper, a new structure of Light-Emitting Diodes (LEDs) based on the usage of Gallium Nitride (GaN) semiconductors has been proposed in which, in order to improve the efficiency of the output light, a reflective layer along with two Photonic Crystal (PC) layers have been employed. The applied changes and their optimization illustrated increase in output light efficiency as much as 133% with respect to a typical LED.

References:

[1] Hui Gao, Kang Li, Fan-Min Kong, Xin-Lian Chen, and Zhen-Ming Zhang," Improving Light Extraction Efficiency of GaN Based LEDs by Al_x Ga_1-x N Confining Layer and Embedded Photonic Crystals", IEEE Journal of selected topics in Quantum Electronics, VOL. 18, NO. 6, November/December 2012.

[2] M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C.Carter-Coman,E. I. Chen, I. H. Tan, P. Grillot, N. F. Chui, J.W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, "High-power truncated-inverted-pyramid (Al_xGa_1-x) _0.5In _0.5P/GaP light-emitting diodes exhibiting >50 external quantum efficiency", Appl. Phys. Lett., vol. 75, pp. 2365–2367, 1999.

[3] E.Y. Schnitzer,C.Caneau, andT. J. Gmitter," Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from Al-GaAs/GaAs/AlGaAs double heterostructures", Appl. Phys. Lett., vol. 62, pp. 131–133, 1993.

[4] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening", Appl. Phys. Lett., vol. 84, pp. 855–857, 2004.

[5] Xi, J.-Q., H. Luo, A. J. Pasquale, J. K. Kim, and E. F. Schubert. "Enhanced light extraction in GaInN light-emitting diode with pyramid reflector", IEEE Photonics Technology Letters 18(22), 2347–2349; 2006.

[6] Aliyu, Y. H., D. V. Morgan, H. Thomas, and S. W. Bland, "AlGaInP LEDs using thermally evaporated transparent conducting indium tin oxide (ITO)", 1995.

[7] D. J. R. Erchak, S. H. Fan, P. Rakich, J. D. Joannoupoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, "Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode", Appl. Phys. Lett., vol. 78, pp. 563–565, 2001.

[8] H. Y. Ryu, J. K. Hwang, Y. J. Lee, and Y. H. Lee, "Enhancement of light extraction from two-dimensional photonic crystal slab structures", IEEE J. Sel. Topics Quantum Electron, vol. 8, no. 2, pp. 231–237, Mar./Apr. 2002.

[9] M. Boroditsky, T. F. Krauss, R. Coccioli, R. Vrijen, R. Bhat, and E. Yablonovitch, "Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals", Appl. Phys. Lett., vol. 75, pp. 1036– 1038, 1999.

[10] T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, "III-nitride blue and ultraviolet photonic crystal light emitting diodes", Appl. Phys. Lett., vol. 84, pp. 466–468, 2004.