طراحی حسگر دمای کم توان مبتنی بر عملکرد زیرآستانه ترانزیستورهای نانولوله کربنی با خطای یک و نیم درجه سانتی‌گراد درمحدوده 30- تا 125 درجه سانتی‌گراد
محورهای موضوعی : انرژی های تجدیدپذیر
سید محمد علی زنجانی
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معصومه عالی پور
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مصطفی پرویزی
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1 - مرکز تحقیقات ریز شبکه های هوشمند- واحد نجف آباد، دانشگاه آزاد اسلامی، نجف آباد، ایران
2 - دانشکده مهندسی برق- واحد نجف‌آباد، دانشگاه آزاد اسلامی، نجف‌آباد، ایران
3 - دانشکده مهندسی برق- واحد نجف‌آباد، دانشگاه آزاد اسلامی، نجف‌آباد، ایران
کلید واژه: زیر آستانه, ترانزیستور اثر میدان نانولوله کربنی, کم توان, حسگر دما,
چکیده مقاله :
در این مقاله، یک حس گر دمای جدید مبتنی بر عملکرد ترانزیستورهای نانو لوله کربنی در ناحیه زیرآستانه طراحی و شبیه سازی شده است که باعث کاهش چشم گیر توان مصرفی می شود. در خروجی از یک تقویت کننده تفاضلی استفاده شده و جهت ثابت ماندن مقادیر بهره و سطح مد مشترک در اثر تغییرات دما، روشی پیشنهادی می تواند به جبران سازی این تغییرات ناشی از تغییرات دمایی در محدوده 30- الی 125+ درجه سانتی گراد پاسخ دهد. حس گر دمایی به همراه تقویت کننده آن می تواند به صورت یک سیستم بر روی سطح تراشه برای مانیتورینگ و کنترل دما استفاده گردد. همچنین در فناوری ترانزیستور اثر میدان نانو لوله کربنی (CNTFET) با ولتاژ تغذیه 5/0 ولت در ناحیه زیرآستانه توسط نرم افزار HSPICE توسط مدل نانوکربنی (CNT) 32 نانومتر شبیه سازی شده است. نتایج شبیه‌سازی نشان می دهد که در دماهای 30- تا 125 درجه سانتی گراد به صورت خطی و با حساسیت یک میلی ولت بر درجه، دما را اندازه گیری می کند و در دمای اتاق تنها 123 نانو وات توان مصرف می نماید. همچنین خطای اندازه گیری شده در دمای 125 درجه سانتی گراد حدود 5/2 میلی-ولت است که به معنی خطای 25/1 درجه سانتی گراد در این دما است.
In this paper, a new temperature sensor based on the performance of carbon nanotube transistors in the subthreshold region is designed and simulated which leads to reduction of power consumption. Also, a differential amplifier is used in the output of the sensor. in order to keep the values of gain and common mode level voltage due to temperature changes, a method has been proposed that can compensate for these parameters variation due to temperature variation in the range of -30 ºC to +125 ºC. The proposed temperature sensor with its amplifier can be used as a system on the chip surface for temperature monitoring and control. The proposed temperature sensor in the CNTFET carbon nanotube field effect transistor technology with a supply voltage of 0.5 V in the sub-threshold area is simulated by HSPICE software with a 32nm CNT model. The simulation results show that at proposed circuits can measure the temperature in range of -30 ºC to +125 ºC linearly with a sensitivity of 1 mV/ ºC and consumes only 123 nW at room temperature. Also, the error measured at 125 ºC is about 2.5 mV, which means an error of 1.25 ºC at this temperature.
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